BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.
|Published (Last):||17 March 2007|
|PDF File Size:||13.51 Mb|
|ePub File Size:||12.40 Mb|
|Price:||Free* [*Free Regsitration Required]|
Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Oscilloscope display for VCEOsust. Dtaasheet to mounting instructions for F-pack envelopes. Test circuit for VCEOsust.
Reverse bias safe operating area. UNIT – – 1. Forward bias safe operating area.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. August 2 Rev 1. Typical base-emitter and collector-emitter saturation voltages.
Normalised power derating and second breakdown curves. Application information Where application information is given, it is advisory and does not form part xatasheet the specification. Typical base-emitter saturation voltage.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. SOT; The seating plane is electrically isolated from all terminals. Exposure to limiting values for extended periods may affect device reliability.
Region of permissible DC operation. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Typical DC current gain. Extension for repetitive pulse operation.
Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Test but11wf inductive load. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. August 7 Rev 1.
Product specification This data sheet contains final product specifications. Stress but11wf one or more of the limiting values may cause permanent damage to the device. The information presented in this document does not form part of any quotation or but1a1f, it is believed to be accurate and reliable and may be changed without notice. August 8 Rev 1. Test circuit resistive load. August 4 Ptot max and Ptot peak max lines. No liability will be accepted by the publisher for any consequence of its use.
Switching times waveforms with resistive load. Switching times waveforms with inductive load.